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ManufacturerVISHAY
Manufacturer Part NoSISS54DN-T1-GE3
Order Code3729612RL
Product RangeTrenchFET Gen IV
Technical Datasheet
779 In Stock
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Quantity | Price |
---|---|
100+ | RM4.890 |
500+ | RM3.880 |
1000+ | RM3.570 |
5000+ | RM3.570 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
RM489.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSISS54DN-T1-GE3
Order Code3729612RL
Product RangeTrenchFET Gen IV
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id185.6A
Drain Source On State Resistance0.00088ohm
Transistor Case StylePowerPAK 1212-8S
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.2V
Power Dissipation65.7W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV
Qualification-
SVHCLead (07-Nov-2024)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
185.6A
Transistor Case Style
PowerPAK 1212-8S
Rds(on) Test Voltage
10V
Power Dissipation
65.7W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.00088ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.2V
No. of Pins
8Pins
Product Range
TrenchFET Gen IV
SVHC
Lead (07-Nov-2024)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000185