Print Page
SIZF914DT-T1-GE3
Dual MOSFET, N Channel + Schottky, 25 V, 25 V, 60 A, 60 A, 600 µohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIZF914DT-T1-GE3
Order Code2932985RL
Product RangeTrenchFET Gen IV SkyFET Series
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 20 week(s)
Notify me when back in stock
| Quantity | Price |
|---|---|
| 100+ | RM4.790 |
| 500+ | RM4.300 |
| 1000+ | RM3.900 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
RM479.00
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIZF914DT-T1-GE3
Order Code2932985RL
Product RangeTrenchFET Gen IV SkyFET Series
Technical Datasheet
Transistor PolarityN Channel + Schottky
Channel TypeN Channel + Schottky
Drain Source Voltage Vds N Channel25V
Drain Source Voltage Vds25V
Drain Source Voltage Vds P Channel25V
Continuous Drain Current Id60A
Continuous Drain Current Id N Channel60A
On Resistance Rds(on)600µohm
Continuous Drain Current Id P Channel60A
Drain Source On State Resistance N Channel600µohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel600µohm
Rds(on) Test Voltage10V
Transistor Case StylePowerPAIR
Gate Source Threshold Voltage Max2.2V
Power Dissipation Pd60W
No. of Pins8Pins
Power Dissipation N Channel60W
Power Dissipation P Channel60W
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV SkyFET Series
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCLead (07-Nov-2024)
Technical Specifications
Transistor Polarity
N Channel + Schottky
Drain Source Voltage Vds N Channel
25V
Drain Source Voltage Vds P Channel
25V
Continuous Drain Current Id N Channel
60A
Continuous Drain Current Id P Channel
60A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.2V
No. of Pins
8Pins
Power Dissipation P Channel
60W
Product Range
TrenchFET Gen IV SkyFET Series
Automotive Qualification Standard
-
SVHC
Lead (07-Nov-2024)
Channel Type
N Channel + Schottky
Drain Source Voltage Vds
25V
Continuous Drain Current Id
60A
On Resistance Rds(on)
600µohm
Drain Source On State Resistance N Channel
600µohm
Drain Source On State Resistance P Channel
600µohm
Transistor Case Style
PowerPAIR
Power Dissipation Pd
60W
Power Dissipation N Channel
60W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.003