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SQ4532AEY-T1_GE3
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 7.3 A, 7.3 A, 0.021 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSQ4532AEY-T1_GE3
Order Code3470717RL
Product RangeTrenchFET Series
Technical Datasheet
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| Quantity | Price |
|---|---|
| 100+ | RM2.150 |
| 500+ | RM2.150 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
RM215.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSQ4532AEY-T1_GE3
Order Code3470717RL
Product RangeTrenchFET Series
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id7.3A
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel7.3A
On Resistance Rds(on)0.021ohm
Continuous Drain Current Id P Channel7.3A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.021ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.021ohm
Gate Source Threshold Voltage Max2V
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation Pd3.3W
Power Dissipation N Channel3.3W
Power Dissipation P Channel3.3W
Operating Temperature Max175°C
Product RangeTrenchFET Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
7.3A
Continuous Drain Current Id N Channel
7.3A
Continuous Drain Current Id P Channel
7.3A
Drain Source On State Resistance N Channel
0.021ohm
Drain Source On State Resistance P Channel
0.021ohm
Transistor Case Style
SOIC
Power Dissipation Pd
3.3W
Power Dissipation P Channel
3.3W
Product Range
TrenchFET Series
Automotive Qualification Standard
AEC-Q101
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
On Resistance Rds(on)
0.021ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2V
No. of Pins
8Pins
Power Dissipation N Channel
3.3W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001