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SQJ122EP-T1_GE3
Power MOSFET, N Channel, 30 V, 98 A, 0.0035 ohm, PowerPAK SO, Surface Mount
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3,000 In Stock
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3000 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 100+ | RM2.780 |
| 500+ | RM2.210 |
| 1000+ | RM1.760 |
| 5000+ | RM1.750 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
RM278.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSQJ122EP-T1_GE3
Order Code4588043RL
Technical Datasheet
Drain Source Voltage Vds30V
Continuous Drain Current Id98A
Drain Source On State Resistance0.0035ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.5V
Power Dissipation60W
No. of Pins4Pins
Operating Temperature Max175°C
Technical Specifications
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0035ohm
Gate Source Threshold Voltage Max
3.5V
No. of Pins
4Pins
SVHC
Lead (21-Jan-2025)
Continuous Drain Current Id
98A
Rds(on) Test Voltage
10V
Power Dissipation
60W
Operating Temperature Max
175°C
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001