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SQJB46EP-T1_GE3
Dual MOSFET, N Channel, 40 V, 40 V, 30 A, 30 A, 0.0061 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSQJB46EP-T1_GE3
Order Code3702699RL
Product RangeTrenchFET Gen IV Series
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 31 week(s)
Notify me when back in stock
| Quantity | Price |
|---|---|
| 100+ | RM3.540 |
| 500+ | RM2.900 |
| 1000+ | RM2.470 |
| 5000+ | RM2.450 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
RM354.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSQJB46EP-T1_GE3
Order Code3702699RL
Product RangeTrenchFET Gen IV Series
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds40V
Drain Source Voltage Vds N Channel40V
Drain Source Voltage Vds P Channel40V
Continuous Drain Current Id30A
Continuous Drain Current Id N Channel30A
On Resistance Rds(on)0.0061ohm
Continuous Drain Current Id P Channel30A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.0061ohm
Drain Source On State Resistance P Channel0.0061ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.8V
Transistor Case StylePowerPAK SO
Power Dissipation Pd34W
No. of Pins8Pins
Power Dissipation N Channel34W
Power Dissipation P Channel34W
Operating Temperature Max175°C
Product RangeTrenchFET Gen IV Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
40V
Drain Source Voltage Vds P Channel
40V
Continuous Drain Current Id N Channel
30A
Continuous Drain Current Id P Channel
30A
Drain Source On State Resistance N Channel
0.0061ohm
Rds(on) Test Voltage
10V
Transistor Case Style
PowerPAK SO
No. of Pins
8Pins
Power Dissipation P Channel
34W
Product Range
TrenchFET Gen IV Series
Automotive Qualification Standard
AEC-Q101
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
40V
Continuous Drain Current Id
30A
On Resistance Rds(on)
0.0061ohm
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.0061ohm
Gate Source Threshold Voltage Max
2.8V
Power Dissipation Pd
34W
Power Dissipation N Channel
34W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
No SVHC (07-Nov-2024)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001