AUIRFR540ZTRL
Power MOSFET, N Channel, 100 V, 35 A, 0.0285 ohm, TO-252AA, Surface Mount
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| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | RM17.090 | RM17.09 |
| Total Price | RM17.09 | ||
| Quantity | Price |
|---|---|
| 1+ | RM17.090 |
| 10+ | RM8.670 |
| 100+ | RM8.000 |
| 500+ | RM6.650 |
| 1000+ | RM6.380 |
Product Information
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | AUIRFR540ZTRLCopy |
| Manufacturer Standard Lead Time | 24 weeks |
| Order Code | Re-Reel2579963RL Cut Tape2579963 |
| Product Range | HEXFET |
| Also Known As | SP001520296 |
| Technical Datasheet | |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 100V |
| Continuous Drain Current Id | 35A |
| Drain Source On State Resistance | 0.0285ohm |
| Transistor Case Style | TO-252AA |
| Transistor Mounting | Surface Mount |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 4V |
| Power Dissipation | 91W |
| No. of Pins | 3Pins |
| Operating Temperature Max | 175°C |
| Product Range | HEXFET |
| Qualification | AEC-Q101 |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
AUIRFR540ZTRL is a HEXFET® power MOSFET. This is specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. This feature combines to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Application includes automatic voltage regulator (AVR), solenoid injection, body control, low power automotive applications.
- 100V minimum drain-to-source breakdown voltage (TJ = 25°C, VGS = 0V, ID = 250µA)
- 0.092V/°C typical breakdown voltage temp. coefficient (TJ = 25°C, static at TJ = 25°C, ID = 1mA)
- 22.5mohm typical static drain-to-source on-resistance (TJ = 25°C, VGS = 10V, ID = 21A)
- 2.0 to 4.0V gate threshold voltage range (VDS = VGS, ID = 50µA, TJ = 25°C)
- 28S minimum forward trans conductance (VDS = 25V, ID = 21A, TJ = 25°C)
- 20µA maximum drain-to-source leakage current (TJ = 25°C, VDS = 100V, VGS = 0V)
- 39nC typical total gate charge (D = 21A, TJ = 25°C)
- 42ns typical rise time (D = 21A, TJ = 25°C)
- 190pF typical effective output capacitance (VGS = 0V, VDS = 0V to 80V)
- TO-252AA package, operating junction and storage temperature range from -55 to + 175°C
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 35A |
| Transistor Case Style | TO-252AA |
| Rds(on) Test Voltage | 10V |
| Power Dissipation | 91W |
| Operating Temperature Max | 175°C |
| Qualification | AEC-Q101 |
| SVHC | No SVHC (25-Jun-2025) |
| Drain Source Voltage Vds | 100V |
|---|---|
| Drain Source On State Resistance | 0.0285ohm |
| Transistor Mounting | Surface Mount |
| Gate Source Threshold Voltage Max | 4V |
| No. of Pins | 3Pins |
| Product Range | HEXFET |
| MSL | MSL 1 - Unlimited |
Technical Docs (2)
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Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | Mexico Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .007983 |