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Wide-Band Gap Devices:

1,964 Products Found
Gallium Nitride (GaN) FETs
Gallium Nitride (GaN) FETs (206)
Silicon Carbide (SiC) MOSFETs & Modules
Silicon Carbide (SiC) MOSFETs & Modules (1,170)
Silicon Carbide Schottky Diodes
Silicon Carbide Schottky Diodes (588)
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INFINEON

Empowering High-Efficiency Power Solutions with IRFP MOSFETs

Empowering High-Efficiency Power Solutions with IRFP MOSFETs
Smart Retail: Build Solutions That Think Ahead

Smart Retail: Build Solutions That Think Ahead

Design to optimise operations & customer experience.

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New Semiconductors - Discretes

ON Semi EliteSiC SiC MOSFET Half-Bridge & Full-Bridge Power Modules (P-Channel, 1.2 kV)
ONSEMI
ON Semi EliteSiC SiC MOSFET Half-Bridge & Full-Bridge Power Modules (P-Channel, 1.2 kV)
ONSEMI
High-Performance 1.2 kV Infineon TRENCHSTOP™ IGBT Power Devices
INFINEON
High-Performance 1.2 kV Infineon TRENCHSTOP™ IGBT Power Devices
INFINEON
Bipolar Pre-Biased / Digital Transistor
ONSEMI
Bipolar Pre-Biased / Digital Transistor
ONSEMI
Trench Gate, -50V to -200V P-Channel Power MOSFETs
LITTELFUSE
Trench Gate, -50V to -200V P-Channel Power MOSFETs
LITTELFUSE
Bipolar transistors
DIOTEC
Bipolar transistors
DIOTEC
Broad range of Bridge Rectifiers that maximize board space and improve reliability
DIODES
Broad range of Bridge Rectifiers that maximize board space and improve reliability
DIODES
Infineon CoolGaN™ 100 V e‑Mode Power Transistor
INFINEON
Infineon CoolGaN™ 100 V e‑Mode Power Transistor
INFINEON
YAGEO XSEMI range MOSFETS
YAGEO XSEMI
YAGEO XSEMI range MOSFETS
YAGEO XSEMI
TP65H035G4YS - gallium nitride (GaN) FET
RENESAS
TP65H035G4YS - gallium nitride (GaN) FET
RENESAS
G3R60MT07K – Silicon Carbide MOSFET
GENESIC SEMICONDUCTOR
G3R60MT07K – Silicon Carbide MOSFET
GENESIC SEMICONDUCTOR
Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.
NEXPERIA
Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.
NEXPERIA
New onsemi 650v SiC MOSFETs
ONSEMI
New onsemi 650v SiC MOSFETs
ONSEMI
600V Gallium Nitride (GaN) Transistor
INFINEON
600V Gallium Nitride (GaN) Transistor
INFINEON
600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode
NEXPERIA
600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode
NEXPERIA
Celebrate Big, Save Bigger

Celebrate Big, Save Bigger

Exclusive Deepavali deals are here to make your festive shopping brighter.

*Terms and conditions apply
INFINEON

Empowering High-Efficiency Power Solutions with IRFP MOSFETs

Empowering High-Efficiency Power Solutions with IRFP MOSFETs
Smart Retail: Build Solutions That Think Ahead

Smart Retail: Build Solutions That Think Ahead

Design to optimise operations & customer experience.

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