MG ELECTRONICS Silicon Carbide (SiC) MOSFETs & Modules

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Manufacturer Part No	Order Code	Manufacturer / Description	Price For	Price	MOSFET Module Configuration	Channel Type	Continuous Drain Current Id	Drain Source Voltage Vds	Drain Source On State Resistance	Transistor Case Style	No. of Pins	Rds(on) Test Voltage	Gate Source Threshold Voltage Max	Power Dissipation	Operating Temperature Max	Product Range

MG250YD2YMS3(DAE)	4860994 Data Sheet RoHS	TOSHIBA Silicon Carbide MOSFET Half Bridge Dual N Channel 250 A 2.2 kV Module	Each	1+RM4,365.720	Half Bridge	Dual N Channel	250A	2.2kV	-	Module	11Pins	-	5.5V	2kW	150°C	-
MG400Q2YMS3(DAE)	4860995 Data Sheet RoHS	TOSHIBA Silicon Carbide MOSFET Half Bridge Dual N Channel 400 A 1.2 kV Module	Each	1+RM3,146.470	Half Bridge	Dual N Channel	400A	1.2kV	-	Module	11Pins	-	5.6V	1.35kW	150°C	-
MG400V2YMS3(DAE)	4860996 Data Sheet RoHS	TOSHIBA Silicon Carbide MOSFET Half Bridge Dual N Channel 400 A 1.7 kV Module	Each	1+RM4,719.700	Half Bridge	Dual N Channel	400A	1.7kV	-	Module	11Pins	-	5.5V	2kW	150°C	-
MG250V2YMS3(DAE)	4860993 Data Sheet RoHS	TOSHIBA Silicon Carbide MOSFET Half Bridge Dual N Channel 250 A 1.7 kV Module	Each	1+RM3,303.790	Half Bridge	Dual N Channel	250A	1.7kV	-	Module	11Pins	-	5.5V	1.35kW	150°C	-
MG600Q2YMS3(DAE)	4860997 Data Sheet RoHS	TOSHIBA Silicon Carbide MOSFET Half Bridge Dual N Channel 600 A 1.2 kV Module	Each	1+RM4,719.700	Half Bridge	Dual N Channel	600A	1.2kV	-	Module	11Pins	-	5.6V	2kW	150°C	-

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