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Silicon Carbide (SiC) MOSFETs & Modules :
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Drain Source On State Resistance
=0.0158ohm
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price For | Price | Quantity | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMICROELECTRONICS | Each (Supplied on Cut Tape) Cut Tape | 1+RM102.660 5+RM88.160 10+RM73.650 50+RM70.270 100+RM66.880 More Pricing... | Single | N Channel | 110A | 900V | 0.0158ohm | H2PAK | 7Pins | 18V | 4.2V | 625W | 175°C | |||||
STMICROELECTRONICS | Each | 1+RM103.540 5+RM93.260 10+RM82.970 50+RM81.320 100+RM79.660 More Pricing... | Single | N Channel | 110A | 900V | 0.0158ohm | HiP247 | 4Pins | 18V | 4.2V | 625W | 200°C | |||||
STMICROELECTRONICS | Each | 1+RM95.820 5+RM85.820 10+RM75.630 50+RM74.120 100+RM73.170 More Pricing... | Single | N Channel | 110A | 900V | 0.0158ohm | HiP247 | 3Pins | 18V | 4.2V | 625W | 200°C | |||||
