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Silicon Carbide (SiC) MOSFETs & Modules :
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Drain Source On State Resistance
=0.0353ohm
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price For | Price | Quantity | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+RM199.860 5+RM173.600 10+RM146.660 50+RM139.050 100+RM133.260 | Full Bridge | Quad N Channel | 63A | 1.2kV | 0.0353ohm | DIP | 32Pins | 18V | 5.1V | 241W | 175°C | CIPOS Prime Series | ||||||
Each | 1+RM259.130 5+RM225.080 10+RM190.150 50+RM180.290 100+RM172.770 | SixPack | Six N Channel | 64A | 1.2kV | 0.0353ohm | DIP | 32Pins | 18V | 5.1V | 245W | 175°C | CIPOS Prime Series | ||||||
