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Silicon Carbide (SiC) MOSFETs & Modules :
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Drain Source On State Resistance
=0.162ohm
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MOSFET Module Configuration
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Rds(on) Test Voltage
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price For | Price | Quantity | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+RM61.990 5+RM48.270 10+RM34.550 50+RM33.290 100+RM32.020 More Pricing... | Single | N Channel | 17A | 1.2kV | 0.162ohm | TO-247 | 3Pins | 20V | 3.1V | 119W | 175°C | EliteSiC Series | ||||||
Each | 1+RM42.830 5+RM34.020 10+RM25.210 50+RM24.710 100+RM24.210 More Pricing... | Single | N Channel | 17A | 1.2kV | 0.162ohm | TO-247 | 3Pins | 20V | 3.1V | 119W | 175°C | EliteSiC Series | ||||||
