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Silicon Carbide (SiC) MOSFETs & Modules :
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Drain Source On State Resistance
=1910µohm
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MOSFET Module Configuration
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price For | Price | Quantity | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+RM2,411.770 | Half Bridge | N Channel | 500A | 1.2kV | 1910µohm | Module | 11Pins | 18V | 5.15V | 175°C | EconoDUAL 3 Series | ||||||
Each | 1+RM2,596.230 | Half Bridge | N Channel | 470A | 1.2kV | 1910µohm | Module | 11Pins | 18V | 5.15V | 175°C | EconoDUAL 3 Series | ||||||
Each | 1+RM2,545.320 | Half Bridge | Dual N Channel | 420A | 1.2kV | 1910µohm | Module | 11Pins | 18V | 5.15V | 175°C | EconoDUAL 3 Series | ||||||
