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Silicon Carbide (SiC) MOSFETs & Modules :
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Drain Source On State Resistance
=2050µohm
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price For | Price | Quantity | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+RM4,310.580 | SixPack | N Channel | 485A | 750V | 2050µohm | ACEPACK DRIVE | 30Pins | 18V | 4.4V | 704W | 175°C | ||||||
Each (Supplied in a Waffle Tray) | 1+RM4,166.740 | SixPack | N Channel | 485A | 750V | 2050µohm | Module | 30Pins | 18V | 4.4V | 704W | 175°C | ||||||
