Silicon Carbide (SiC) MOSFETs & Modules

Manufacturer Part No	Order Code	Manufacturer / Description	Price For	Price	MOSFET Module Configuration	Channel Type	Continuous Drain Current Id	Drain Source Voltage Vds	Drain Source On State Resistance	Transistor Case Style	No. of Pins	Rds(on) Test Voltage	Gate Source Threshold Voltage Max	Power Dissipation	Operating Temperature Max
SCTWA70N120G2V-4	3806246 Data Sheet RoHS	STMICROELECTRONICS Silicon Carbide MOSFET Single N Channel 91 A 1.2 kV 0.021 ohm HiP247	Each	1+RM162.590 5+RM159.340 10+RM156.090 50+RM152.840 100+RM149.750	Single	N Channel	91A	1.2kV	0.021ohm	HiP247	4Pins	18V	2.45V	547W	200°C
SCTH70N120G2V-7	3748720 Data Sheet RoHS	STMICROELECTRONICS Silicon Carbide MOSFET Single N Channel 90 A 1.2 kV 0.021 ohm H2PAK	Each (Supplied on Cut Tape) Cut Tape	1+RM149.380 5+RM137.360 10+RM124.150 50+RM121.310 100+RM118.510	Single	N Channel	90A	1.2kV	0.021ohm	H2PAK	7Pins	18V	2.45V	469W	175°C
SCTW40N120G2V	3748722 Data Sheet RoHS	STMICROELECTRONICS Silicon Carbide MOSFET Single N Channel 36 A 1.2 kV 0.07 ohm HiP247	Each	1+RM81.380 5+RM72.280 10+RM63.170 50+RM61.910 100+RM60.650 More Pricing...	Single	N Channel	36A	1.2kV	0.07ohm	HiP247	3Pins	18V	2.45V	278W	200°C
SCTW70N120G2V	3577228 Data Sheet RoHS	STMICROELECTRONICS Silicon Carbide MOSFET Single N Channel 91 A 1.2 kV 0.021 ohm HiP247	Each	1+RM160.810 5+RM157.600 10+RM154.380 50+RM151.170 100+RM148.110	Single	N Channel	91A	1.2kV	0.021ohm	HiP247	3Pins	18V	2.45V	547W	200°C
SCTH40N120G2V-7	3758567 Data Sheet RoHS	STMICROELECTRONICS Silicon Carbide MOSFET Single N Channel 36 A 1.2 kV 0.07 ohm H2PAK	Each (Supplied on Cut Tape) Cut Tape	1+RM87.870 5+RM77.400 10+RM66.930 50+RM64.660 100+RM62.390 More Pricing...	Single	N Channel	36A	1.2kV	0.07ohm	H2PAK	7Pins	18V	2.45V	238W	175°C