Silicon Carbide (SiC) MOSFETs & Modules

Manufacturer Part No	Order Code	Manufacturer / Description	Price For	Price	MOSFET Module Configuration	Channel Type	Continuous Drain Current Id	Drain Source Voltage Vds	Drain Source On State Resistance	Transistor Case Style	No. of Pins	Rds(on) Test Voltage	Gate Source Threshold Voltage Max	Power Dissipation	Operating Temperature Max	Product Range
G3R160MT12J	3598649 Data Sheet RoHS	GENESIC Silicon Carbide MOSFET Single N Channel 22 A 1.2 kV 0.16 ohm TO-263 (D2PAK)	Each	1+RM35.920 5+RM33.600 10+RM31.280 50+RM30.410 100+RM30.300	Single	N Channel	22A	1.2kV	0.16ohm	TO-263 (D2PAK)	7Pins	15V	2.69V	128W	175°C	G3R
G3R75MT12D	3598622 Data Sheet RoHS	GENESIC Silicon Carbide MOSFET Single N Channel 41 A 1.2 kV 0.075 ohm TO-247	Each	1+RM48.040 5+RM45.610	Single	N Channel	41A	1.2kV	0.075ohm	TO-247	3Pins	15V	2.69V	207W	175°C	G3R
G3R30MT12K	3598641 Data Sheet RoHS	GENESIC Silicon Carbide MOSFET Single N Channel 90 A 1.2 kV 0.03 ohm TO-247	Each	1+RM124.830 5+RM108.210 10+RM101.010	Single	N Channel	90A	1.2kV	0.03ohm	TO-247	4Pins	15V	2.69V	281W	175°C	G3R
G3R350MT12J	3598645 Data Sheet RoHS	GENESIC Silicon Carbide MOSFET Single N Channel 11 A 1.2 kV 0.35 ohm TO-263 (D2PAK)	Each	1+RM26.620 10+RM23.930 100+RM20.930 500+RM20.430 1000+RM19.940	Single	N Channel	11A	1.2kV	0.35ohm	TO-263 (D2PAK)	7Pins	15V	2.69V	75W	175°C	G3R
G3R20MT12N	3598658 Data Sheet RoHS	GENESIC Silicon Carbide MOSFET Single N Channel 105 A 1.2 kV 0.02 ohm SOT-227	Each	1+RM279.340	Single	N Channel	105A	-	0.02ohm	SOT-227	-	15V	2.69V	365W	175°C	G3R