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Silicon Carbide (SiC) MOSFETs & Modules :
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Gate Source Threshold Voltage Max
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price For | Price | Quantity | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+RM86.760 5+RM76.500 10+RM66.240 50+RM65.490 100+RM64.730 More Pricing... | Single | N Channel | 60A | 1.2kV | 0.039ohm | TO-247 | 3Pins | 20V | 2.97V | 348W | 175°C | EliteSiC Series | ||||||
Each | 1+RM136.460 25+RM128.440 | Single | N Channel | 11A | 3.3kV | 0.416ohm | TO-247 | 4Pins | 20V | 2.97V | 131W | 150°C | - | ||||||
Each | 1+RM562.090 | Single | N Channel | 41A | 3.3kV | 0.084ohm | TO-247 | 4Pins | 20V | 2.97V | 381W | 150°C | - | ||||||
