Silicon Carbide (SiC) MOSFETs & Modules

Manufacturer Part No	Order Code	Manufacturer / Description	Price For	Price	MOSFET Module Configuration	Channel Type	Continuous Drain Current Id	Drain Source Voltage Vds	Drain Source On State Resistance	Transistor Case Style	No. of Pins	Rds(on) Test Voltage	Gate Source Threshold Voltage Max	Power Dissipation	Operating Temperature Max	Product Range
NXH020P120MNF1PTG	3973632 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Half Bridge Dual N Channel 51 A 1.2 kV 0.02 ohm Module	Each	1+RM660.640 5+RM594.580 10+RM559.340	Half Bridge	Dual N Channel	51A	1.2kV	0.02ohm	-	18Pins	20V	2.81V	119W	175°C	-
NXH020F120MNF1PTG	3929798 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET FourPack Four N Channel 51 A 1.2 kV 0.02 ohm Module	Each	1+RM890.570 5+RM801.520 10+RM754.020	FourPack	Four N Channel	51A	1.2kV	0.02ohm	-	22Pins	20V	2.81V	119W	175°C	-
NVHL160N120SC1	3464028 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET EliteSiC Single N Channel 17 A 1.2 kV 0.162 ohm TO-247	Each	1+RM61.990 5+RM48.270 10+RM34.550 50+RM33.290 100+RM32.020 More Pricing...	Single	N Channel	17A	1.2kV	0.162ohm	TO-247	3Pins	20V	3.1V	119W	175°C	EliteSiC Series
C3M0075120K	2709521 Data Sheet RoHS	WOLFSPEED Silicon Carbide Power MOSFET N Channel 30.8 A 1.2 kV 0.075 ohm 15 V 2.5 V	Each	1+RM55.020 5+RM55.010	Single	N Channel	30.8A	1.2kV	0.075ohm	TO-247	4Pins	15V	2.5V	119W	150°C	C3M
NTHL160N120SC1	3464008 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET EliteSiC Single N Channel 17 A 1.2 kV 0.162 ohm TO-247	Each	1+RM42.830 5+RM34.020 10+RM25.210 50+RM24.710 100+RM24.210 More Pricing...	Single	N Channel	17A	1.2kV	0.162ohm	TO-247	3Pins	20V	3.1V	119W	175°C	EliteSiC Series