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Silicon Carbide (SiC) MOSFETs & Modules :

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Manufacturer Part No
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Manufacturer / Description
Availability
Price For
Price
Quantity
MOSFET Module Configuration
Channel Type
Continuous Drain Current Id
Drain Source Voltage Vds
Transistor Case Style
Gate Source Threshold Voltage Max
Power Dissipation
Operating Temperature Max
3573228

RoHS

Each
1+RM12,429.490
Half Bridge
Dual N Channel
400A
1.2kV
Module
4V
2.45kW
150°C
3573233

RoHS

Each
1+RM9,210.500
Half Bridge
Dual N Channel
600A
1.2kV
Module
5.6V
2.45kW
150°C
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