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Silicon Carbide (SiC) MOSFETs & Modules :
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Power Dissipation
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price For | Price | Quantity | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+RM110.160 5+RM107.960 10+RM105.760 50+RM103.560 100+RM101.460 | Single | N Channel | 60A | 1.2kV | 0.035ohm | HiP247 | 4Pins | 18V | 3V | 389W | 200°C | ||||||
Each | 1+RM85.920 5+RM79.670 10+RM73.420 50+RM71.960 100+RM70.490 More Pricing... | Single | N Channel | 60A | 1.2kV | 0.035ohm | HiP247 | 3Pins | 18V | 3V | 389W | 200°C | ||||||
