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Silicon Carbide (SiC) MOSFETs & Modules :
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Power Dissipation
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price For | Price | Quantity | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMICROELECTRONICS | Each | 1+RM7,181.440 | SixPack | N Channel | 488A | 1.2kV | 2600µohm | ACEPACK DRIVE | 30Pins | 18V | 4.4V | 869W | 175°C | |||||
STMICROELECTRONICS | Each | 1+RM6,661.910 | SixPack | N Channel | 488A | 1.2kV | 2600µohm | ACEPACK DRIVE | 30Pins | 18V | 4.4V | 869W | 175°C | |||||
