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Silicon Carbide (SiC) MOSFETs & Modules :
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price For | Price | Quantity | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+RM3,906.820 | Half Bridge | Dual N Channel | 291A | 1.2kV | - | - | 11Pins | - | 4.8V | 925W | 150°C | ||||||
Each | 1+RM2,631.790 | Half Bridge | Dual N Channel | 193A | 1.2kV | 0.013ohm | Module | - | 20V | 2.6V | 925W | 150°C | ||||||
