Silicon Carbide (SiC) MOSFETs & Modules

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Manufacturer Part No	Order Code	Manufacturer / Description	Price For	Price	MOSFET Module Configuration	Channel Type	Continuous Drain Current Id	Drain Source Voltage Vds	Drain Source On State Resistance	Transistor Case Style	No. of Pins	Rds(on) Test Voltage	Gate Source Threshold Voltage Max	Power Dissipation	Operating Temperature Max	Product Range

UJ3N065025K3S	4014283 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 85 A 650 V 0.022 ohm TO-247	Each	1+RM120.240 5+RM98.840 10+RM77.430 50+RM75.890 100+RM74.340 More Pricing...	Single	N Channel	85A	650V	0.022ohm	TO-247	3Pins	2V	11.5V	441W	175°C	-
UJ3N120035K3S	4014286 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 63 A 1.2 kV 0.031 ohm TO-247	Each	1+RM166.820 5+RM143.720 10+RM120.620 50+RM118.210 100+RM115.800	Single	N Channel	63A	1.2kV	0.031ohm	TO-247	3Pins	2V	11.5V	429W	175°C	-
UJ3N120070K3S	4014287 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 33.5 A 1.2 kV 0.063 ohm TO-247	Each	1+RM97.570 5+RM79.830 10+RM62.090 50+RM60.850 100+RM59.610 More Pricing...	Single	N Channel	33.5A	1.2kV	0.063ohm	TO-247	3Pins	2V	11.5V	254W	175°C	-
UJ4N075005K4S	4750207 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 120 A 750 V 4800 µohm TO-247	Each	1+RM211.460 5+RM188.300 10+RM165.140 50+RM161.840 100+RM158.540	Single	N Channel	120A	750V	4800µohm	TO-247	4Pins	2V	-3.7V	714W	175°C	EliteSiC Series
UF3N120007K4S	4750183 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 120 A 1.2 kV 7100 µohm TO-247	Each	1+RM337.980 5+RM292.150 10+RM245.570 50+RM238.940	Single	N Channel	120A	1.2kV	7100µohm	TO-247	4Pins	2V	-4.7V	789W	175°C	EliteSiC Series