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IRFR5410TRPBF

Name: Power MOSFET, P Channel, 100 V, 13 A, 0.205 ohm, TO-252AA, Surface Mount
Brand: INFINEON
SKU: 2468040RL
Availability: InStock

Power MOSFET, P Channel, 100 V, 13 A, 0.205 ohm, TO-252AA, Surface Mount

Image is for illustrative purposes only. Please refer to product description.

ManufacturerINFINEON

Manufacturer Part NoIRFR5410TRPBF

Order Code2468040RL

Also Known AsSP001557100

Technical Datasheet

Data Sheet

See all Technical Docs

Packaging Options

Cut Tape

Re-Reel

39,860 In Stock

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392 Delivery in 1-2 Business Days(SG stock)

39468 Delivery in 3-4 Business Days(UK stock)

Quantity	Price
100+	RM3.920
500+	RM3.100
1000+	RM2.330
5000+	RM2.290

Price for:Each (Supplied on Cut Tape)

Minimum: 100

Multiple: 1

RM392.00

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Product Information

ManufacturerINFINEON

Manufacturer Part NoIRFR5410TRPBF

Order Code2468040RL

Also Known AsSP001557100

Technical Datasheet

Data Sheet

Channel TypeP Channel

Drain Source Voltage Vds100V

Continuous Drain Current Id13A

Drain Source On State Resistance0.205ohm

Transistor Case StyleTO-252AA

Transistor MountingSurface Mount

Rds(on) Test Voltage10V

Gate Source Threshold Voltage Max4V

Power Dissipation66W

No. of Pins3Pins

Operating Temperature Max150°C

Product Range-

Qualification-

MSLMSL 1 - Unlimited

SVHCNo SVHC (21-Jan-2025)

Product Overview

The IRFR5410TRPBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation levels up to 1.5W are possible in typical surface-mount applications.

Advanced process technology
Fully avalanche rating
Low static drain-to-source ON-resistance
Dynamic dV/dt rating

Applications

Automotive, Power Management

Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Technical Specifications

Channel Type

P Channel

Continuous Drain Current Id

13A

Transistor Case Style

TO-252AA

Rds(on) Test Voltage

10V

Power Dissipation

66W

Operating Temperature Max

150°C

Qualification

SVHC

No SVHC (21-Jan-2025)

Drain Source Voltage Vds

100V

Drain Source On State Resistance

0.205ohm

Transistor Mounting

Surface Mount

Gate Source Threshold Voltage Max

No. of Pins

3Pins

Product Range

MSL

MSL 1 - Unlimited

Technical Docs (3)

Technical Data Sheet EN

Simulation Model EN

Product Change Notice EN

Alternatives for IRFR5410TRPBF

2 Products Found

Associated Products

4 Products Found

Legislation and Environmental

Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out

Tariff No:85412900

US ECCN:EAR99

EU ECCN:NLR

RoHS Compliant:Yes

RoHS

RoHS Phthalates Compliant:Yes