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Quantity | Price |
---|---|
3000+ | RM1.110 |
9000+ | RM1.090 |
24000+ | RM1.070 |
45000+ | RM1.050 |
Product Information
Product Overview
The FDG8850NZ is a dual N-channel logic level enhancement-mode MOSFET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
- Very small package outline
- Very low level gate drive requirements allowing direct operation in 3V circuits (VGS (th) <lt/>1.5V)
- ±12V Gate to source voltage
- 0.75A Continuous drain current
- 2.2A Pulsed drain current
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
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-
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6Pins
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-
MSL 1 - Unlimited
30V
750mA
0.25ohm
SC-70
360mW
150°C
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No SVHC (27-Jun-2024)
Technical Docs (3)
Alternatives for FDG8850NZ
1 Product Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate