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FDG8850NZ
Dual MOSFET, N Channel, 30 V, 750 mA, 0.25 ohm
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| Quantity | Price |
|---|---|
| 100+ | RM1.670 |
| 500+ | RM1.280 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
RM167.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDG8850NZ
Order Code1498956RL
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id750mA
On Resistance Rds(on)0.25ohm
Continuous Drain Current Id N Channel750mA
Continuous Drain Current Id P Channel-
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.25ohm
Drain Source On State Resistance P Channel-
Rds(on) Test Voltage4.5V
Transistor Case StyleSC-70
Gate Source Threshold Voltage Max1V
Power Dissipation Pd360mW
No. of Pins6Pins
Power Dissipation N Channel360mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDG8850NZ is a dual N-channel logic level enhancement-mode MOSFET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
- Very small package outline
- Very low level gate drive requirements allowing direct operation in 3V circuits (VGS (th) <lt/>1.5V)
- ±12V Gate to source voltage
- 0.75A Continuous drain current
- 2.2A Pulsed drain current
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
-
On Resistance Rds(on)
0.25ohm
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance N Channel
0.25ohm
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
1V
No. of Pins
6Pins
Power Dissipation P Channel
-
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
750mA
Continuous Drain Current Id N Channel
750mA
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
-
Transistor Case Style
SC-70
Power Dissipation Pd
360mW
Power Dissipation N Channel
360mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000069