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FGA25N120ANTDTU
IGBT Single Transistor, 25 A, 2.5 V, 312 W, 1.2 kV, TO-3P, 3 Pins
- Manufacturer:
- ON SEMICONDUCTOR ON SEMICONDUCTOR
- Manufacturer Part No:
- FGA25N120ANTDTU
- Order Code:
- 1095025
- Technical Datasheet:
- FGA25N120ANTDTU Datasheet
Product Overview
- Collector emitter voltage VCES is 1.2KV
- Collector current at 25°C is 50A
- Diode continuous forward current at 25°C is 50A
- Operating junction temperature range from - 55°C to 150°C
- Maximum power dissipation at 25°C is 312W
- Collector to emitter saturation voltage is 2.65V at IC = 50 A
- Maximum diode forward voltage is 3V at IF = 25A
- Diode peak reverse recovery current is 40A
Product Information
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- 25A
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- 2.5V
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- 312W
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- 1.2kV
- :
- TO-3P
- :
- 3Pins
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- 150°C
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- -
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- -
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- -
Technical Docs (2)
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Extra stock is available upon order to the Supplier Lead Time which is approximately 9/20/21
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- Price for:
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Quantity | Price | Your Price |
---|---|---|
1+ | RM18.62 | |
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100+ | RM12.69 | |
250+ | RM11.94 | |
500+ | RM11.27 | |
1000+ | RM10.25 |
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