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MMUN2212LT1G
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 22 kohm, 22 kohm
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| Quantity | Price |
|---|---|
| 500+ | RM0.139 |
| 3000+ | RM0.109 |
| 9000+ | RM0.105 |
| 24000+ | RM0.081 |
| 45000+ | RM0.080 |
Price for:Each (Supplied on Cut Tape)
Minimum: 500
Multiple: 5
RM69.50
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Product Information
ManufacturerONSEMI
Manufacturer Part NoMMUN2212LT1G
Order Code9556656RL
Technical Datasheet
Digital Transistor PolaritySingle NPN
Transistor PolaritySingle NPN
Collector Emitter Voltage Max NPN50V
Collector Emitter Voltage V(br)ceo50V
Collector Emitter Voltage Max PNP-
Continuous Collector Current Ic100mA
Continuous Collector Current100mA
Base Input Resistor R122kohm
Resistor Ratio, R1 / R21(Ratio)
Base Emitter Resistor R222kohm
Transistor Case StyleSOT-23
RF Transistor CaseSOT-23
No. of Pins3 Pin
Transistor MountingSurface Mount
Power Dissipation400mW
Operating Temperature Max150°C
DC Current Gain hFE Min60hFE
Product Range-
Qualification-
Automotive Qualification StandardAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The MMUN2212LT1G is a NPN Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device.
- Simplifies circuit design
- Reduces board space
- Reduces component count
Applications
Industrial, Power Management
Technical Specifications
Digital Transistor Polarity
Single NPN
Collector Emitter Voltage Max NPN
50V
Collector Emitter Voltage Max PNP
-
Continuous Collector Current
100mA
Resistor Ratio, R1 / R2
1(Ratio)
Transistor Case Style
SOT-23
No. of Pins
3 Pin
Power Dissipation
400mW
DC Current Gain hFE Min
60hFE
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
Single NPN
Collector Emitter Voltage V(br)ceo
50V
Continuous Collector Current Ic
100mA
Base Input Resistor R1
22kohm
Base Emitter Resistor R2
22kohm
RF Transistor Case
SOT-23
Transistor Mounting
Surface Mount
Operating Temperature Max
150°C
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Alternatives for MMUN2212LT1G
1 Product Found
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005