FDC6321C
Dual MOSFET, N and P Channel, 25 V, 25 V, 680 mA, 460 mA, 0.45 ohm
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| Quantity | Price |
|---|---|
| 100+ | RM1.760 |
| 500+ | RM1.350 |
Product Information
Product Overview
The FDC6321C is a dual N/P-channel Digital FET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. The device is an improved design especially for low voltage applications as a replacement for bipolar digital transistors in load switching applications. Since bias resistors are not required, this dual digital FET can replace several digital transistors with difference bias resistors.
- Very low level gate drive requirements allowing direct operation in 3V circuits
- Gate-source Zener for ESD ruggedness
Applications
Industrial, Power Management
Technical Specifications
N and P Channel
25V
25V
0.33ohm
460mA
0.45ohm
4.5V
SuperSOT
900mW
900mW
-
-
No SVHC (27-Jun-2024)
Complementary N and P Channel
25V
460mA
680mA
Surface Mount
1.1ohm
800mV
6Pins
900mW
150°C
-
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate