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FDC6321C
Dual MOSFET, N and P Channel, 25 V, 25 V, 680 mA, 460 mA, 0.45 ohm
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | FDC6321CCopy |
| Manufacturer Standard Lead Time | 54 weeks |
| Order Code | Full Reel2438427 Re-Reel9844848RL Cut Tape9844848 |
| Your Part Number | |
| Technical Datasheet |
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | RM3.610 | RM18.05 |
| Total Price | RM18.05 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | RM3.610 |
| 50+ | RM2.960 |
| 100+ | RM2.310 |
| 500+ | RM1.690 |
| 1500+ | RM1.660 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | RM0.897 |
| 9000+ | RM0.880 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | FDC6321CCopy |
| Manufacturer Standard Lead Time | 54 weeks |
| Order Code | Full Reel2438427 Re-Reel9844848RL Cut Tape9844848 |
| Technical Datasheet | |
| Channel Type | N and P Channel |
| Drain Source Voltage Vds N Channel | 25V |
| Drain Source Voltage Vds P Channel | 25V |
| Continuous Drain Current Id N Channel | 680mA |
| Continuous Drain Current Id P Channel | 460mA |
| Drain Source On State Resistance N Channel | 0.45ohm |
| Drain Source On State Resistance P Channel | 1.1ohm |
| Transistor Case Style | SuperSOT |
| No. of Pins | 6Pins |
| Power Dissipation N Channel | 900mW |
| Power Dissipation P Channel | 900mW |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
The FDC6321C is a dual N/P-channel Digital FET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. The device is an improved design especially for low voltage applications as a replacement for bipolar digital transistors in load switching applications. Since bias resistors are not required, this dual digital FET can replace several digital transistors with difference bias resistors.
- Very low level gate drive requirements allowing direct operation in 3V circuits
- Gate-source Zener for ESD ruggedness
Applications
Industrial, Power Management
Technical Specifications
| Channel Type | N and P Channel |
|---|---|
| Drain Source Voltage Vds P Channel | 25V |
| Continuous Drain Current Id P Channel | 460mA |
| Drain Source On State Resistance P Channel | 1.1ohm |
| No. of Pins | 6Pins |
| Power Dissipation P Channel | 900mW |
| Product Range | - |
| MSL | MSL 1 - Unlimited |
| Drain Source Voltage Vds N Channel | 25V |
|---|---|
| Continuous Drain Current Id N Channel | 680mA |
| Drain Source On State Resistance N Channel | 0.45ohm |
| Transistor Case Style | SuperSOT |
| Power Dissipation N Channel | 900mW |
| Operating Temperature Max | 150°C |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2025) |
Technical Docs (2)
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Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | Philippines Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .000113 |