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FGD3N60LSDTM
IGBT, 6 A, 1.8 V, 40 W, 600 V, TO-252 (DPAK), 3 Pins
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFGD3N60LSDTM
Order Code3368680RL
Technical Datasheet
Continuous Collector Current6A
Collector Emitter Saturation Voltage1.8V
Power Dissipation40W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-252 (DPAK)
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingSurface Mount
Product Range-
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
Continuous Collector Current
6A
Power Dissipation
40W
Transistor Case Style
TO-252 (DPAK)
Operating Temperature Max
150°C
Product Range
-
Collector Emitter Saturation Voltage
1.8V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Surface Mount
SVHC
No SVHC (15-Jan-2018)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0004