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NVMFS1D9N08X
Power MOSFET, PPAP Capable, N Channel, 80 V, 201 A, 0.0019 ohm, WDFN, Surface Mount
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1,400 In Stock
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| Quantity | Price |
|---|---|
| 100+ | RM7.130 |
| 500+ | RM6.630 |
| 1500+ | RM6.500 |
| 3000+ | RM6.370 |
| 4500+ | RM6.240 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
RM713.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNVMFS1D9N08X
Order Code4472911RL
Technical Datasheet
Drain Source Voltage Vds80V
Continuous Drain Current Id201A
Drain Source On State Resistance0.0019ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.6V
Power Dissipation164W
No. of Pins5Pins
Operating Temperature Max175°C
Technical Specifications
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.0019ohm
Gate Source Threshold Voltage Max
3.6V
No. of Pins
5Pins
Continuous Drain Current Id
201A
Rds(on) Test Voltage
10V
Power Dissipation
164W
Operating Temperature Max
175°C
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001