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NVMFS1D9N08X
Power MOSFET, PPAP Capable, N Channel, 80 V, 201 A, 0.0019 ohm, WDFN, Surface Mount
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1,400 In Stock
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| Quantity | Price |
|---|---|
| 1+ | RM16.810 |
| 10+ | RM10.030 |
| 100+ | RM7.130 |
| 500+ | RM6.630 |
| 1500+ | RM6.500 |
| 3000+ | RM6.370 |
| 4500+ | RM6.240 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
RM16.81
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNVMFS1D9N08X
Order Code4472911
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id201A
Drain Source On State Resistance0.0019ohm
Transistor Case StyleWDFN
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.6V
Power Dissipation164W
No. of Pins5Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
201A
Transistor Case Style
WDFN
Rds(on) Test Voltage
10V
Power Dissipation
164W
Operating Temperature Max
175°C
Qualification
AEC-Q101
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.0019ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.6V
No. of Pins
5Pins
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (1)
Legislation and Environmental
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:To be advised
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate