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GD800HFY120C3S
IGBT Module, Half Bridge, 1.203 kA, 1.7 V, 3.836 kW, 150 °C, Module
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6 In Stock
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| Quantity | Price |
|---|---|
| 1+ | RM1,876.020 |
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Multiple: 1
RM1,876.02
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Product Information
ManufacturerSTARPOWER
Manufacturer Part NoGD800HFY120C3S
Order Code3912082
Technical Datasheet
IGBT ConfigurationHalf Bridge
Continuous Collector Current1.203kA
Collector Emitter Saturation Voltage1.7V
Power Dissipation3.836kW
Operating Temperature Max150°C
Transistor Case StyleModule
IGBT TerminationStud
Collector Emitter Voltage Max1.2kV
IGBT TechnologyTrench
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Technical Specifications
IGBT Configuration
Half Bridge
Collector Emitter Saturation Voltage
1.7V
Operating Temperature Max
150°C
IGBT Termination
Stud
IGBT Technology
Trench
Product Range
-
Continuous Collector Current
1.203kA
Power Dissipation
3.836kW
Transistor Case Style
Module
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):1.5