Silicon Carbide (SiC) MOSFETs & Modules

Manufacturer Part No	Order Code	Manufacturer / Description	Price For	Price	MOSFET Module Configuration	Channel Type	Continuous Drain Current Id	Drain Source Voltage Vds	Drain Source On State Resistance	Transistor Case Style	No. of Pins	Rds(on) Test Voltage	Gate Source Threshold Voltage Max	Power Dissipation	Operating Temperature Max	Product Range
BSM450D12P4G102	4168759 Data Sheet RoHS	ROHM Silicon Carbide MOSFET Half Bridge Dual N Channel 447 A 1.2 kV Module	Each	1+RM4,865.090	Half Bridge	Dual N Channel	447A	1.2kV	-	-	11Pins	-	4.8V	1.45kW	150°C	-
BSM300D12P4G101	4168758 Data Sheet RoHS	ROHM Silicon Carbide MOSFET Half Bridge Dual N Channel 291 A 1.2 kV Module	Each	1+RM3,906.820	Half Bridge	Dual N Channel	291A	1.2kV	-	-	11Pins	-	4.8V	925W	150°C	-
BSM600D12P4G103	4168760 Data Sheet RoHS	ROHM Silicon Carbide MOSFET Half Bridge Dual N Channel 567 A 1.2 kV Module	Each	1+RM5,602.230	Half Bridge	Dual N Channel	567A	1.2kV	-	-	11Pins	-	4.8V	1.78kW	150°C	-
FF06MR12A04MA2AKSA1	4717051 Data Sheet RoHS	INFINEON Silicon Carbide MOSFET Half Bridge Dual N Channel 190 A 1.2 kV 5560 µohm Module	Each	1+RM817.210 5+RM800.870 10+RM784.530	Half Bridge	Dual N Channel	190A	1.2kV	5560µohm	Module	11Pins	18V	4.55V	20mW	175°C	HybridPACK Series
FF1MR12MM1HWB11BPSA1	4695760 Data Sheet RoHS	INFINEON Silicon Carbide MOSFET Half Bridge N Channel 500 A 1.2 kV 1910 µohm Module	Each	1+RM2,411.770	Half Bridge	N Channel	500A	1.2kV	1910µohm	Module	11Pins	18V	5.15V	-	175°C	EconoDUAL 3 Series
FF1MR12MM1HPB11BPSA1	4680824 Data Sheet RoHS	INFINEON Silicon Carbide MOSFET Half Bridge N Channel 470 A 1.2 kV 1910 µohm Module	Each	1+RM2,596.230	Half Bridge	N Channel	470A	1.2kV	1910µohm	Module	11Pins	18V	5.15V	-	175°C	EconoDUAL 3 Series
FF1MR12MM1HB11BPSA1	4645033 Data Sheet RoHS	INFINEON Silicon Carbide MOSFET Half Bridge Dual N Channel 420 A 1.2 kV 1910 µohm Module	Each	1+RM2,545.320	Half Bridge	Dual N Channel	420A	1.2kV	1910µohm	Module	11Pins	18V	5.15V	-	175°C	EconoDUAL 3 Series
MD300HFC170C2S	3549206 Data Sheet RoHS	STARPOWER Silicon Carbide MOSFET Half Bridge Dual N Channel 484 A 1.7 kV 3330 µohm Module	Each	1+RM5,129.870	Half Bridge	Dual N Channel	484A	1.7kV	3330µohm	Module	11Pins	15V	2.5V	-	150°C	-
MG400V2YMS3(DAE)	4860996 Data Sheet RoHS	TOSHIBA Silicon Carbide MOSFET Half Bridge Dual N Channel 400 A 1.7 kV Module	Each	1+RM4,694.000	Half Bridge	Dual N Channel	400A	1.7kV	-	Module	11Pins	-	5.5V	2kW	150°C	-
MG400Q2YMS3(DAE)	4860995 Data Sheet RoHS	TOSHIBA Silicon Carbide MOSFET Half Bridge Dual N Channel 400 A 1.2 kV Module	Each	1+RM3,129.330	Half Bridge	Dual N Channel	400A	1.2kV	-	Module	11Pins	-	5.6V	1.35kW	150°C	-
MG250V2YMS3(DAE)	4860993 Data Sheet RoHS	TOSHIBA Silicon Carbide MOSFET Half Bridge Dual N Channel 250 A 1.7 kV Module	Each	1+RM3,285.800	Half Bridge	Dual N Channel	250A	1.7kV	-	Module	11Pins	-	5.5V	1.35kW	150°C	-
MG250YD2YMS3(DAE)	4860994 Data Sheet RoHS	TOSHIBA Silicon Carbide MOSFET Half Bridge Dual N Channel 250 A 2.2 kV Module	Each	1+RM4,341.950	Half Bridge	Dual N Channel	250A	2.2kV	-	Module	11Pins	-	5.5V	2kW	150°C	-
MG600Q2YMS3(DAE)	4860997 Data Sheet RoHS	TOSHIBA Silicon Carbide MOSFET Half Bridge Dual N Channel 600 A 1.2 kV Module	Each	1+RM4,694.000	Half Bridge	Dual N Channel	600A	1.2kV	-	Module	11Pins	-	5.6V	2kW	150°C	-
FF01MR14A60MA2XTBPSA1	5114636 Data Sheet RoHS	INFINEON Silicon Carbide MOSFET Silicon Carbide MOSFET Module Half Bridge Dual N Channel 850 A 1.4 kV	Each	1+RM3,741.240	Half Bridge	Dual N Channel	850A	1.4kV	1360µohm	Module	11Pins	18V	4.75V	-	175°C	HybridPACK HD Series