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MD300HFC170C2S
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 484 A, 1.7 kV, 0.00333 ohm, Module
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Available to Order
Manufacturer Standard Lead Time: 24 week(s)
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| Quantity | Price |
|---|---|
| 1+ | RM4,963.680 |
Price for:Each
Minimum: 1
Multiple: 1
RM4,963.68
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Product Information
ManufacturerSTARPOWER
Manufacturer Part NoMD300HFC170C2S
Order Code3549206
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Channel TypeDual N Channel
Continuous Drain Current Id484A
Drain Source Voltage Vds1.7kV
Drain Source On State Resistance0.00333ohm
Transistor Case StyleModule
No. of Pins11Pins
Rds(on) Test Voltage15V
Gate Source Threshold Voltage Max2.5V
Power Dissipation-
Operating Temperature Max150°C
Product Range-
SVHCTo Be Advised
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
484A
Drain Source On State Resistance
0.00333ohm
No. of Pins
11Pins
Gate Source Threshold Voltage Max
2.5V
Operating Temperature Max
150°C
SVHC
To Be Advised
Channel Type
Dual N Channel
Drain Source Voltage Vds
1.7kV
Transistor Case Style
Module
Rds(on) Test Voltage
15V
Power Dissipation
-
Product Range
-
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):1.21