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HGT1S20N60A4S9A
IGBT, D2-PAK, 600V
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoHGT1S20N60A4S9A
Order Code1324847
Technical Datasheet
Continuous Collector Current70A
Collector Emitter Saturation Voltage2.7V
Power Dissipation290W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-263 (D2PAK)
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingSurface Mount
Product Range-
Technical Specifications
Continuous Collector Current
70A
Power Dissipation
290W
Transistor Case Style
TO-263 (D2PAK)
Operating Temperature Max
150°C
Product Range
-
Collector Emitter Saturation Voltage
2.7V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Surface Mount
Technical Docs (1)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85423990
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00143