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BSD235NH6327XTSA1
Dual MOSFET, N Channel, 20 V, 20 V, 950 mA, 950 mA, 0.266 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSD235NH6327XTSA1
Order Code2443477
Product RangeOptiMOS 2 Series
Also Known AsBSD235N H6327, SP000917652
Technical Datasheet
Packaging Options
12,960 In Stock
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12960 Delivery in 3-4 Business Days(UK stock)
| Quantity | Price |
|---|---|
| 5+ | RM1.380 |
| 50+ | RM0.854 |
| 250+ | RM0.591 |
| 1000+ | RM0.447 |
| 5000+ | RM0.358 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
RM6.90
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSD235NH6327XTSA1
Order Code2443477
Product RangeOptiMOS 2 Series
Also Known AsBSD235N H6327, SP000917652
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel950mA
Continuous Drain Current Id P Channel950mA
Drain Source On State Resistance N Channel0.266ohm
Drain Source On State Resistance P Channel0.266ohm
Transistor Case StyleSOT-363
No. of Pins6Pins
Power Dissipation N Channel500mW
Power Dissipation P Channel500mW
Operating Temperature Max150°C
Product RangeOptiMOS 2 Series
QualificationAEC-Q101
SVHCNo SVHC (21-Jan-2025)
Product Overview
- OptiMOS™ 2 small-signal-transistor
- Dual N-channel
- Enhancement mode
- Super logic level (2.5V rated)
- Avalanche rated
- Qualified according to AEC Q101
- Halogen-free according to IEC61249-2-21
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
950mA
Drain Source On State Resistance P Channel
0.266ohm
No. of Pins
6Pins
Power Dissipation P Channel
500mW
Product Range
OptiMOS 2 Series
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id N Channel
950mA
Drain Source On State Resistance N Channel
0.266ohm
Transistor Case Style
SOT-363
Power Dissipation N Channel
500mW
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000005