IDW40G120C5BFKSA1
Silicon Carbide Schottky Diode, thinQ, Common Cathode, 1.2 kV, 110 A, 202 nC, TO-247
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| Quantity | Price |
|---|---|
| 1+ | RM64.800 |
| 5+ | RM58.050 |
| 10+ | RM51.290 |
| 50+ | RM50.270 |
| 100+ | RM49.240 |
| 250+ | RM48.220 |
Product Information
Product Overview
5th Generation thinQ!™ 1200V SiC schottky diode suitable for use in solar inverters, uninterruptable power supplies, motor drives and power factor correction. Benefits of using Schottky diode are system efficiency improvement over Si diodes, enabling higher frequency / increased power density solutions, system size/cost savings due to reduced heatsink requirements and smaller magnetics, reduced EMI, highest efficiency across the entire load range, robust diode operation during surge events and high reliability.
- Revolutionary semiconductor material - silicon carbide
- No reverse recovery current / no forward recovery
- Temperature independent switching behaviour
- Low forward voltage even at high operating temperature
- Tight forward voltage distribution
- Excellent thermal performance
- Extended surge current capability
- Specified dv/dt ruggedness
- Qualified according to JEDEC for target applications
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
thinQ
1.2kV
202nC
3 Pin
Through Hole
No SVHC (21-Jan-2025)
Common Cathode
110A
TO-247
175°C
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Technical Docs (1)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate