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IGW50N60H3FKSA1
IGBT, 50 A, 2.3 V, 333 W, 600 V, TO-247, 3 Pins
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IGW50N60H3FKSA1Copy |
| Manufacturer Standard Lead Time | 38 weeks |
| Order Code | 1832337 |
| Also Known As | IGW50N60H3, SP000702548 |
| Your Part Number | |
| Technical Datasheet |
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| Quantity | Price |
|---|---|
| 1+ | RM22.700 |
| 10+ | RM14.650 |
| 100+ | RM10.370 |
| 500+ | RM10.170 |
| 1000+ | RM9.960 |
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Product Information
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IGW50N60H3FKSA1Copy |
| Manufacturer Standard Lead Time | 38 weeks |
| Order Code | 1832337 |
| Also Known As | IGW50N60H3, SP000702548 |
| Technical Datasheet | |
| Continuous Collector Current | 50A |
| Collector Emitter Saturation Voltage | 2.3V |
| Power Dissipation | 333W |
| Collector Emitter Voltage Max | 600V |
| Transistor Case Style | TO-247 |
| No. of Pins | 3Pins |
| Operating Temperature Max | 175°C |
| Transistor Mounting | Through Hole |
| Product Range | - |
| MSL | - |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
The IGW50N60H3 is a High Speed IGBT in Trench and field-stop technology recommended in combination. The high speed device is used to reduce the size of the active components (25 to 70kHz). The high speed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-OFF switching behaviour, leading to low turn-OFF losses.
- Designed specifically to replace planar MOSFETs in applications switching @ frequencies below 70kHz
- Low switching losses for high efficiency
- Fast switching behaviour with low EMI emissions
- Optimized diode for target applications, meaning further improvement in switching losses
- Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
- Short-circuit capability
- Excellent performance
- Low switching and conduction losses
- Very good EMI behaviour
- Small gate resistor for reduced delay time and voltage overshoot
- Best-in-class IGBT efficiency and EMI behaviour
- Packaged with and without freewheeling diode for increased design freedom
- Green product
- Halogen-free
Applications
Alternative Energy, Power Management
Technical Specifications
| Continuous Collector Current | 50A |
|---|---|
| Power Dissipation | 333W |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Product Range | - |
| SVHC | No SVHC (25-Jun-2025) |
| Collector Emitter Saturation Voltage | 2.3V |
|---|---|
| Collector Emitter Voltage Max | 600V |
| No. of Pins | 3Pins |
| Transistor Mounting | Through Hole |
| MSL | - |
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Associated Products
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Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | Philippines Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .00542 |