IMDQ75R008M1HXUMA1
Silicon Carbide MOSFET, Single, N Channel, 173 A, 750 V, 0.0106 ohm, HDSOP
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IMDQ75R008M1HXUMA1Copy |
| Manufacturer Standard Lead Time | 25 weeks |
| Order Code | Re-Reel4295097RL Cut Tape4295097 |
| Product Range | CoolSiC Gen I Series |
| Also Known As | IMDQ75R008M1H, SP005588261 |
| Your Part Number | |
| Technical Datasheet |
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| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | RM168.200 | RM168.20 |
| Total Price | RM168.20 | ||
| Quantity | Price |
|---|---|
| 1+ | RM168.200 |
| 5+ | RM147.110 |
| 10+ | RM126.010 |
| 50+ | RM125.990 |
| 100+ | RM125.970 |
| 250+ | RM123.460 |
Product Information
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IMDQ75R008M1HXUMA1Copy |
| Manufacturer Standard Lead Time | 25 weeks |
| Order Code | Re-Reel4295097RL Cut Tape4295097 |
| Product Range | CoolSiC Gen I Series |
| Also Known As | IMDQ75R008M1H, SP005588261 |
| Technical Datasheet | |
| MOSFET Module Configuration | Single |
| Channel Type | N Channel |
| Continuous Drain Current Id | 173A |
| Drain Source Voltage Vds | 750V |
| Drain Source On State Resistance | 0.0106ohm |
| Transistor Case Style | HDSOP |
| No. of Pins | 22Pins |
| Rds(on) Test Voltage | 18V |
| Gate Source Threshold Voltage Max | 5.6V |
| Power Dissipation | 625W |
| Operating Temperature Max | 175°C |
| Product Range | CoolSiC Gen I Series |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
IMDQ75R008M1HXUMA1 is a CoolSiC™ MOSFET 750V Generation 1 (G1) in Q-DPAK package. The CoolSiC™ MOSFET 750V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling a simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750V strengths offering more density, optimized power loop design and less system and assembly cost. Typical applications include solid state relays and circuit breakers, EV charging infrastructure, solar PV inverters, UPS (uninterruptable power supplies, energy storage and battery formation and telecom and server SMPS.
- 7.8mohm RDs(on) typical
- Highly robust 750V technology, 100% avalanche tested
- Enhanced robustness and reliability for bus voltages beyond 500V
- Superior efficiency in hard switching
- Higher switching frequency in soft switching topologies
- Robustness against parasitic turn on for unipolar gate driving
- Best‑in‑class thermal dissipation
- Reduced switching losses through improved gate control
Technical Specifications
| MOSFET Module Configuration | Single |
|---|---|
| Continuous Drain Current Id | 173A |
| Drain Source On State Resistance | 0.0106ohm |
| No. of Pins | 22Pins |
| Gate Source Threshold Voltage Max | 5.6V |
| Operating Temperature Max | 175°C |
| SVHC | No SVHC (25-Jun-2025) |
| Channel Type | N Channel |
|---|---|
| Drain Source Voltage Vds | 750V |
| Transistor Case Style | HDSOP |
| Rds(on) Test Voltage | 18V |
| Power Dissipation | 625W |
| Product Range | CoolSiC Gen I Series |
Technical Docs (1)
Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | Malaysia Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .0013 |