IPB025N10N3GATMA1
Power MOSFET, N Channel, 100 V, 180 A, 0.002 ohm, TO-263 (D2PAK), Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | RM29.090 |
| 10+ | RM20.550 |
| 100+ | RM16.580 |
| 500+ | RM14.220 |
| 1000+ | RM13.510 |
Product Information
Product Overview
The IPB025N10N3 G is a 100V N-channel Power MOSFET that offers superior solutions for high efficiency and high power-density SMPS. Compared to other transistors, this MOSFET achieves a reduction of 30% in both RDS (on) and FOM (Figure of Merit). The OptiMOS™ MOSFET offers industry's lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.
- Excellent switching performance
- Environmentally-friendly
- Increased efficiency
- Highest power density
- Less paralleling required
- Smallest board-space consumption
- Easy to design
Applications
Power Management, Motor Drive & Control, Industrial, Audio
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
180A
TO-263 (D2PAK)
10V
300W
175°C
-
No SVHC (21-Jan-2025)
100V
0.002ohm
Surface Mount
2.7V
7Pins
-
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate