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IPD180N10N3GBTMA1
Power MOSFET, N Channel, 100 V, 43 A, 0.0147 ohm, TO-252 (DPAK), Surface Mount
No Longer Manufactured
Packaging Options
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPD180N10N3GBTMA1Copy
Order Code
Re-Reel2617464RL
Cut Tape2617464
Product RangeOptiMOS 3
Also Known AsIPD180N10N3 G, SP000482438
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id43A
Drain Source On State Resistance0.0147ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.7V
Power Dissipation71W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeOptiMOS 3
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
43A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
71W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0147ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.7V
No. of Pins
3Pins
Product Range
OptiMOS 3
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001