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IPI08CN10N G
Power MOSFET, N Channel, 100 V, 95 A, 6400 µohm, TO-262, Through Hole
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No Longer Stocked
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPI08CN10N GCopy
Order Code1775603
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id95A
Drain Source On State Resistance6400µohm
Transistor Case StyleTO-262
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation167W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
95A
Transistor Case Style
TO-262
Rds(on) Test Voltage
10V
Power Dissipation
167W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
6400µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002