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| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRF3205PBFCopy |
| Manufacturer Standard Lead Time | 31 weeks |
| Order Code | 1704017 |
| Product Range | HEXFET Series |
| Also Known As | SP001559536 |
| Your Part Number | |
| Technical Datasheet |
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| Quantity | Price |
|---|---|
| 1+ | RM9.540 |
| 10+ | RM6.010 |
| 100+ | RM5.140 |
| 500+ | RM4.110 |
| 1000+ | RM3.790 |
| 5000+ | RM3.650 |
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Product Information
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRF3205PBFCopy |
| Manufacturer Standard Lead Time | 31 weeks |
| Order Code | 1704017 |
| Product Range | HEXFET Series |
| Also Known As | SP001559536 |
| Technical Datasheet | |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 55V |
| Continuous Drain Current Id | 110A |
| Drain Source On State Resistance | 8000µohm |
| Transistor Case Style | TO-220AB |
| Transistor Mounting | Through Hole |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 4V |
| Power Dissipation | 200W |
| No. of Pins | 3Pins |
| Operating Temperature Max | 175°C |
| Product Range | HEXFET Series |
| Qualification | - |
| MSL | - |
| SVHC | No SVHC (04-Feb-2026) |
Product Overview
The IRF3205PBF is a HEXFET® N-channel Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. Advanced HEXFET® power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
- Dynamic dv/dt rating
- Fully avalanche rated
- Fast switching
- ±20V gate-source voltage
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 110A |
| Transistor Case Style | TO-220AB |
| Rds(on) Test Voltage | 10V |
| Power Dissipation | 200W |
| Operating Temperature Max | 175°C |
| Qualification | - |
| SVHC | No SVHC (04-Feb-2026) |
| Drain Source Voltage Vds | 55V |
|---|---|
| Drain Source On State Resistance | 8000µohm |
| Transistor Mounting | Through Hole |
| Gate Source Threshold Voltage Max | 4V |
| No. of Pins | 3Pins |
| Product Range | HEXFET Series |
| MSL | - |
Technical Docs (3)
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Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | Philippines Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (04-Feb-2026) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .002041 |
