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IRF5305PBF
Power MOSFET, P Channel, 55 V, 31 A, 0.06 ohm, TO-220AB, Through Hole
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| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRF5305PBFCopy |
| Manufacturer Standard Lead Time | 52 weeks |
| Order Code | 8648255 |
| Product Range | HEXFET Series |
| Also Known As | SP001564354 |
| Your Part Number | |
| Technical Datasheet |
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| Quantity | Price |
|---|---|
| 1+ | RM8.900 |
| 10+ | RM6.260 |
| 100+ | RM4.790 |
| 500+ | RM3.800 |
| 1000+ | RM3.090 |
| 5000+ | RM2.970 |
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Product Information
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRF5305PBFCopy |
| Manufacturer Standard Lead Time | 52 weeks |
| Order Code | 8648255 |
| Product Range | HEXFET Series |
| Also Known As | SP001564354 |
| Technical Datasheet | |
| Channel Type | P Channel |
| Drain Source Voltage Vds | 55V |
| Continuous Drain Current Id | 31A |
| Drain Source On State Resistance | 0.06ohm |
| Transistor Case Style | TO-220AB |
| Transistor Mounting | Through Hole |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 4V |
| Power Dissipation | 110W |
| No. of Pins | 3Pins |
| Operating Temperature Max | 175°C |
| Product Range | HEXFET Series |
| Qualification | - |
| MSL | - |
| SVHC | No SVHC (04-Feb-2026) |
Product Overview
The IRF5305PBF is -55V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
- Drain to source voltage Vds is -55V
- Gate to source voltage is ±20V
- On resistance Rds(on) of 60mohm at Vgs of -10V
- Power dissipation Pd of 110W at 25°C
- Continuous drain current Id of -31A at Vgs -10V and 25°C
- Junction temperature range from -55°C to 175°C
Technical Specifications
| Channel Type | P Channel |
|---|---|
| Continuous Drain Current Id | 31A |
| Transistor Case Style | TO-220AB |
| Rds(on) Test Voltage | 10V |
| Power Dissipation | 110W |
| Operating Temperature Max | 175°C |
| Qualification | - |
| SVHC | No SVHC (04-Feb-2026) |
| Drain Source Voltage Vds | 55V |
|---|---|
| Drain Source On State Resistance | 0.06ohm |
| Transistor Mounting | Through Hole |
| Gate Source Threshold Voltage Max | 4V |
| No. of Pins | 3Pins |
| Product Range | HEXFET Series |
| MSL | - |
Technical Docs (3)
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Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | South Korea Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (04-Feb-2026) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .002654 |