IRF6715MTRPBF

IRF6715MTRPBF is a DirectFET™ power MOSFET. It combines the latest HEXFET® power MOSFET silicon technology with the advanced DirectFET™ packaging to achieve the lowest on-state resistance in a package. The DirectFET™ package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET™ package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6715MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies.

• Low profile (<lt/>0.6mm)
• Dual sided cooling compatible, ultra low package inductance
• Optimized for high frequency switching
• Ideal for CPU core DC-DC converters
• Optimized for Sync. FET socket of Sync. buck converter
• Low conduction and switching losses
• Compatible with existing surface mount techniques, 100% Rg tested
• Drain-to-source breakdown voltage is 25V (min, VGS = 0V, ID = 250µA, TJ = 25°C)
• Gate threshold voltage is 1.9V (typ, VDS = VGS, ID = 100µA, TJ = 25°C)
• SO-8 package, operating junction and storage temperature range from -40 to 150°C

Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.