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IRF6720S2TR1PBF
Power MOSFET, N Channel, 30 V, 11 A, 8000 µohm, DirectFET S1, Surface Mount
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No Longer Stocked
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF6720S2TR1PBFCopy
Order Code1688572
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id11A
Drain Source On State Resistance8000µohm
Transistor Case StyleDirectFET S1
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.9V
Power Dissipation1.7W
No. of Pins6Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
11A
Transistor Case Style
DirectFET S1
Rds(on) Test Voltage
10V
Power Dissipation
1.7W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
8000µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.9V
No. of Pins
6Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001