IRF7342TRPBF
Dual MOSFET, P Channel, 55 V, 55 V, 3.4 A, 3.4 A, 0.095 ohm
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRF7342TRPBFCopy |
| Manufacturer Standard Lead Time | 46 weeks |
| Order Code | Re-Reel2468016RL Cut Tape2468016 |
| Also Known As | SP001566208 |
| Your Part Number | |
| Technical Datasheet |
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| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | RM8.740 | RM8.74 |
| Total Price | RM8.74 | ||
| Quantity | Price |
|---|---|
| 1+ | RM8.740 |
| 10+ | RM4.220 |
| 100+ | RM3.760 |
| 500+ | RM2.980 |
| 1000+ | RM2.320 |
| 5000+ | RM2.280 |
Product Information
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRF7342TRPBFCopy |
| Manufacturer Standard Lead Time | 46 weeks |
| Order Code | Re-Reel2468016RL Cut Tape2468016 |
| Also Known As | SP001566208 |
| Technical Datasheet | |
| Channel Type | P Channel |
| Drain Source Voltage Vds N Channel | 55V |
| Drain Source Voltage Vds P Channel | 55V |
| Continuous Drain Current Id N Channel | 3.4A |
| Continuous Drain Current Id P Channel | 3.4A |
| Drain Source On State Resistance N Channel | 0.095ohm |
| Drain Source On State Resistance P Channel | 0.095ohm |
| Transistor Case Style | SOIC |
| No. of Pins | 8Pins |
| Power Dissipation N Channel | 2W |
| Power Dissipation P Channel | 2W |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
| MSL | - |
| SVHC | No SVHC (04-Feb-2026) |
Product Overview
The IRF7342TRPBF is a dual P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
- Generation V technology
- Ultra low ON-resistance
- Surface-mount device
- Dynamic dV/dt rating
- Fast switching performance
Applications
Industrial, Power Management
Technical Specifications
| Channel Type | P Channel |
|---|---|
| Drain Source Voltage Vds P Channel | 55V |
| Continuous Drain Current Id P Channel | 3.4A |
| Drain Source On State Resistance P Channel | 0.095ohm |
| No. of Pins | 8Pins |
| Power Dissipation P Channel | 2W |
| Product Range | - |
| MSL | - |
| Drain Source Voltage Vds N Channel | 55V |
|---|---|
| Continuous Drain Current Id N Channel | 3.4A |
| Drain Source On State Resistance N Channel | 0.095ohm |
| Transistor Case Style | SOIC |
| Power Dissipation N Channel | 2W |
| Operating Temperature Max | 150°C |
| Qualification | - |
| SVHC | No SVHC (04-Feb-2026) |
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Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | Philippines Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (04-Feb-2026) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .000169 |