IRFB4228PBF
Power MOSFET, N Channel, 150 V, 83 A, 0.012 ohm, TO-220AB, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | RM19.860 |
| 10+ | RM17.840 |
| 100+ | RM14.500 |
| 500+ | RM10.720 |
| 1000+ | RM9.830 |
Product Information
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Product Overview
The IRFB4228PBF is a HEXFET® single N-channel PDP switch Power MOSFET specifically designed for sustain, energy recovery and pass switch applications in plasma display panels. It utilizes the latest processing techniques to achieve low ON-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. It combines to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications. It is optimized for PDP sustain, energy recovery and pass switch applications.
- Advanced process technology
- Low EPULSE rating to reduce power dissipation
- Low Qg for fast response
- High repetitive peak current capability for reliable operation
- Short fall and rise times for fast switching
- Repetitive avalanche capability for robustness and reliability
Applications
Consumer Electronics, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
83A
TO-220AB
10V
330W
175°C
-
No SVHC (21-Jan-2025)
150V
0.012ohm
Through Hole
3V
3Pins
-
-
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate