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ManufacturerINFINEON
Manufacturer Part NoIRFR1018EPBFCopy
Order Code1602229
Also Known AsSP001567496
Your Part Number
No Longer Manufactured
Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFR1018EPBFCopy
Order Code1602229
Also Known AsSP001567496
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id56A
Drain Source On State Resistance8400µohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max4V
Power Dissipation110W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (17-Dec-2015)
Product Overview
The IRFR1018EPBF is a N-channel HEXFET® Power MOSFET with high speed power switching and high frequency circuits.
- Dynamic dv/dt rating
- Fully avalanche rated
Applications
Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
56A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
20V
Power Dissipation
110W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (17-Dec-2015)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
8400µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (17-Dec-2015)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000631
